Methods for the formation of fully silicided metal gates

An advanced gate structure that includes a fully silicided metal gate and silicided source and drain regions in which the fully silicided metal gate has a thickness that is greater than the thickness of the silicided source/drain regions is provided. Methods of forming the advanced gate structure ar...

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Hauptverfasser: STEEN MICHELLE L, BIERY GLENN A
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:An advanced gate structure that includes a fully silicided metal gate and silicided source and drain regions in which the fully silicided metal gate has a thickness that is greater than the thickness of the silicided source/drain regions is provided. Methods of forming the advanced gate structure are also provided.