Semiconductor device having optimized shallow junction geometries and method for fabrication thereof

The present invention provides, in one embodiment, a method of fabricating a semiconductor device ( 100 ). The method comprises growing an oxide layer ( 120 ) on a gate structure ( 114 ) and a substrate ( 102 ) and implanting a dopant ( 124 ) into the substrate ( 102 ) and the oxide layer ( 120 ). I...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	HORNUNG BRIAN E, CHAKRAVARTHI SRINIVASAN, ROBERTSON LANCE S, CHIDAMBARAM P.R, ZHANG XIN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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