Manufacturing method of semiconductor device, semiconductor device, substrate for electro-optical device, electro-optical device, and electronic apparatus

To provide a manufacturing method of a semiconductor device, which can form an LDD (lightly doped drain) structure in a self alignment manner, can suppress the length of a doped region, and can prevent characteristics from being unstabilized when oversaturated hydrogen atoms are implanted, a semicon...

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Bibliographische Detailangaben
Hauptverfasser:	ISHIDA YUKIMASA, NOZAWA RYOICHI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING ELECTRIC HEATING ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY FREQUENCY-CHANGING NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS SEMICONDUCTOR DEVICES TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF
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Beschreibung
Zusammenfassung:	To provide a manufacturing method of a semiconductor device, which can form an LDD (lightly doped drain) structure in a self alignment manner, can suppress the length of a doped region, and can prevent characteristics from being unstabilized when oversaturated hydrogen atoms are implanted, a semiconductor device, a substrate for electro-optical device, an electro-optical device, and an electronic apparatus. A manufacturing method of a semiconductor device comprises an electrode formation step of forming an electrode above a semiconductor layer, an insulating film formation step of forming insulating films containing nitrogen on the electrode, and a heat treatment step of performing a heat treatment under an atmosphere containing vapor, oxygen, or hydrogen to form nitrogen concentration distributions in the insulating films.