Semiconductor device and method for manufacturing the same
In a semiconductor device having a first transistor and a second transistor, the first transistor includes a first gate electrode composed of a first material having a first work function, and a first gate insulating film. The second transistor includes a second gate electrode composed of a second m...
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| Zusammenfassung: | In a semiconductor device having a first transistor and a second transistor, the first transistor includes a first gate electrode composed of a first material having a first work function, and a first gate insulating film. The second transistor includes a second gate electrode composed of a second material having a second work function, and a second gate insulating film. The first gate insulating film includes a high-dielectric-constant film, and a first insulating film on the high-dielectric-constant film. In the second gate insulating film, after removing the first gate electrode, the first insulating film on the high-dielectric-constant film is removed. |
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