CHEMICAL MECHANICAL POLISHING PAD WITH GROOVES ALTERNATING BETWEEN A LARGER GROOVE SIZE AND A SMALLER GROOVE SIZE

CHEMICAL MECHANICAL POLISHING PAD WITH GROOVES ALTERNATING BETWEEN A LARGER GROOVE SIZE AND A SMALLER GROOVE SIZE

A chemical mechanical polishing (CMP) pad is provided. The CMP pad includes a groove pattern disposed on a polishing surface of the pad. The groove pattern is formed of an alternating sequence of spaced apart grooves. The alternating sequence of grooves comprises a groove of a first size and a groov...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: STOREY CHARLES A, RODRIGUEZ JOSE O, THOMPSON JOHN F
Format: Patent
Sprache:eng
Schlagworte:
DRESSING OR CONDITIONING OF ABRADING SURFACES
FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
GRINDING
MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING
PERFORMING OPERATIONS
POLISHING
TRANSPORTING
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Beschreibung
Zusammenfassung:A chemical mechanical polishing (CMP) pad is provided. The CMP pad includes a groove pattern disposed on a polishing surface of the pad. The groove pattern is formed of an alternating sequence of spaced apart grooves. The alternating sequence of grooves comprises a groove of a first size and a groove of a second size, wherein the first and second groove sizes are different relative to one another.