Magnetoresistive device and electronic device

A magnetoresistive device ( 11 ) having a lateral structure and provided with a non-magnetic spacer layer ( 3 ) of organic semiconductor material allows the presence of an additional electrode ( 19 ). With this electrode ( 19 ), a switch-function is integrated into the device ( 11 ). Preferably, ele...

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Bibliographische Detailangaben
Hauptverfasser:	LENSSEN KARS-MICHIEL H, COEHOORN REINDER, GIEBELER CARSTEN, ZILKER STEPHAN J
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INDUCTANCES INFORMATION STORAGE MAGNETS PHYSICS SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES SEMICONDUCTOR DEVICES STATIC STORES TRANSFORMERS
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Beschreibung
Zusammenfassung:	A magnetoresistive device ( 11 ) having a lateral structure and provided with a non-magnetic spacer layer ( 3 ) of organic semiconductor material allows the presence of an additional electrode ( 19 ). With this electrode ( 19 ), a switch-function is integrated into the device ( 11 ). Preferably, electrically conductive layers ( 13,23 ) are present for the protection of the ferromagnetic layers ( 1,2 ). The magnetoresistive device ( 11 ) is suitable for integration into an array so as to act as an MRAM device.