Semiconductor device and method of fabricating the same

A semiconductor device includes a semiconductor substrate and an array of protruding electrodes arranged at a pitch X 1 . Each of the protruding electrodes has a height X 3 and is formed on a barrier metal base of diameter X 2 coupled to an electrode arranged on the semiconductor substrate so as to...

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Bibliographische Detailangaben
Hauptverfasser: IKUMO MASAMITSU, MATSUKI HIROHISA, CHIBA SHUICHI, YODA HIROYUKI, OKAMOTO TADAHIRO, ISHIGURI MASAHIKO
Format: Patent
Sprache:eng
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Zusammenfassung:A semiconductor device includes a semiconductor substrate and an array of protruding electrodes arranged at a pitch X 1 . Each of the protruding electrodes has a height X 3 and is formed on a barrier metal base of diameter X 2 coupled to an electrode arranged on the semiconductor substrate so as to satisfy the relations (X 1 /2)