METHOD USING CONDUCTIVE ATOMIC FORCE MICROSCOPY TO MEASURE CONTACT LEAKAGE CURRENT

A method for measuring current leakage of a contact of a semiconductor device formed on or in a substrate, includes scanning the contact with a probe of a conductive atomic force microscope; applying a DC voltage between the substrate and a conductive tip of the probe; and measuring a value of a cur...

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Bibliographische Detailangaben
Hauptverfasser:	LEE JON C, CHUANG JUNG-HSIANG
Format:	Patent
Sprache:	eng
Schlagworte:	APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBEMICROSCOPY [SPM] BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MEASURING MEASURING ELECTRIC VARIABLES MEASURING MAGNETIC VARIABLES PHYSICS SCANNING-PROBE TECHNIQUES OR APPARATUS SEMICONDUCTOR DEVICES TESTING
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Beschreibung
Zusammenfassung:	A method for measuring current leakage of a contact of a semiconductor device formed on or in a substrate, includes scanning the contact with a probe of a conductive atomic force microscope; applying a DC voltage between the substrate and a conductive tip of the probe; and measuring a value of a current passing through the contact to the substrate, in response to the applied DC voltage.