METHOD FOR FABRICATING FLASH MEMORY DEVICE AND STRUCTURE THEREOF

METHOD FOR FABRICATING FLASH MEMORY DEVICE AND STRUCTURE THEREOF

A method for fabricating a flash memory device is provided. A tunnel oxide layer is formed over a substrate. Thereafter, a floating gate, an inter-gate dielectric layer, and a control gate are sequentially formed over the tunnel oxide layer. Since the floating gate includes a plurality of nanocrysta...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: CHANG TINGANG, CHEN JASON
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A method for fabricating a flash memory device is provided. A tunnel oxide layer is formed over a substrate. Thereafter, a floating gate, an inter-gate dielectric layer, and a control gate are sequentially formed over the tunnel oxide layer. Since the floating gate includes a plurality of nanocrystals, the memory cell can still normally function even if partial region of the floating gate is impaired.