Method for producing a mask adapted to an exposure apparatus

An item of information about the respective positions ( 501, 502, 601, 602 ) of at least two structure elements ( 50, 60 ) on a mask is provided. The displacement of the positional positions during the imaging by the lens system of the exposure apparatus, the displacement being governed by lens aber...

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Bibliographische Detailangaben
Hauptverfasser:	KOWALEWSKI JOHANNES, SCHEDEL THORSTEN, VOIGT INA, KUNKEL GERHARD, HASSMANN JENS, SCHRODER UWE P
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS
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Beschreibung
Zusammenfassung:	An item of information about the respective positions ( 501, 502, 601, 602 ) of at least two structure elements ( 50, 60 ) on a mask is provided. The displacement of the positional positions during the imaging by the lens system of the exposure apparatus, the displacement being governed by lens aberration, is measured and correction values ( 540, 640 ) are determined for each of the structure elements. Using the correction values ( 540, 640 ) the positions ( 501, 502, 601, 602 ) are changed in order to form new positions ( 505, 506, 605, 606 ) of the structure elements ( 50, 60 ) in such a way that the aberration effects can be compensated for. A mask ( 40 ) adapted to the exposure apparatus is exposed with the structures at the changed positions. The variation in the positional accuracies and the structure width distributions which is governed by the aberration of lenses is advantageously reduced.