Lithography mask for imaging of convex structures
A lithography mask has an angled structure element (O) formed by a first opaque segment (O 1 ) and by a second opaque segment (O 2 ). The structure element has at least one reflex angle (alpha). The angled structure element (O) includes at least one convex section (A) facing the reflex angle (alpha)...
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creator | AHRENS MARCO KOHLE RODERICK LUDWIG BURKHARD MOUKARA MOLELA THIELE JORG PFORR RAINER MORGANA NICOLO |
description | A lithography mask has an angled structure element (O) formed by a first opaque segment (O 1 ) and by a second opaque segment (O 2 ). The structure element has at least one reflex angle (alpha). The angled structure element (O) includes at least one convex section (A) facing the reflex angle (alpha). At least one transparent structure (T) adjacent to the angled structure element (O) is provided at the convex section (A) of the angled structure element (O). The transparent structure (T) is formed in separated fashion at the convex section (A) of the angled structure element (O) and thus comprises two distinguishable transparent segments (T 1 , T 2 ) formed at least in sections essentially axially symmetrically with respect to the angle bisector (WH) of the reflex angle. |
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fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2005095512A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2005095512A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2005095512A13</originalsourceid><addsrcrecordid>eNrjZDD0ySzJyE8vSizIqFTITSzOVkjLL1LIzE1Mz8xLV8hPU0jOzytLrVAoLikqTS4pLUot5mFgTUvMKU7lhdLcDMpuriHOHrqpBfnxqcUFicmpeakl8aHBRgYGpgaWpqaGRo6GxsSpAgBlTCzs</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Lithography mask for imaging of convex structures</title><source>esp@cenet</source><creator>AHRENS MARCO ; KOHLE RODERICK ; LUDWIG BURKHARD ; MOUKARA MOLELA ; THIELE JORG ; PFORR RAINER ; MORGANA NICOLO</creator><creatorcontrib>AHRENS MARCO ; KOHLE RODERICK ; LUDWIG BURKHARD ; MOUKARA MOLELA ; THIELE JORG ; PFORR RAINER ; MORGANA NICOLO</creatorcontrib><description>A lithography mask has an angled structure element (O) formed by a first opaque segment (O 1 ) and by a second opaque segment (O 2 ). The structure element has at least one reflex angle (alpha). The angled structure element (O) includes at least one convex section (A) facing the reflex angle (alpha). At least one transparent structure (T) adjacent to the angled structure element (O) is provided at the convex section (A) of the angled structure element (O). The transparent structure (T) is formed in separated fashion at the convex section (A) of the angled structure element (O) and thus comprises two distinguishable transparent segments (T 1 , T 2 ) formed at least in sections essentially axially symmetrically with respect to the angle bisector (WH) of the reflex angle.</description><edition>7</edition><language>eng</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; AUXILIARY PROCESSES IN PHOTOGRAPHY ; CINEMATOGRAPHY ; ELECTROGRAPHY ; HOLOGRAPHY ; MATERIALS THEREFOR ; ORIGINALS THEREFOR ; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR,STEREO-PHOTOGRAPHIC PROCESSES ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES ; PHYSICS</subject><creationdate>2005</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20050505&DB=EPODOC&CC=US&NR=2005095512A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20050505&DB=EPODOC&CC=US&NR=2005095512A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>AHRENS MARCO</creatorcontrib><creatorcontrib>KOHLE RODERICK</creatorcontrib><creatorcontrib>LUDWIG BURKHARD</creatorcontrib><creatorcontrib>MOUKARA MOLELA</creatorcontrib><creatorcontrib>THIELE JORG</creatorcontrib><creatorcontrib>PFORR RAINER</creatorcontrib><creatorcontrib>MORGANA NICOLO</creatorcontrib><title>Lithography mask for imaging of convex structures</title><description>A lithography mask has an angled structure element (O) formed by a first opaque segment (O 1 ) and by a second opaque segment (O 2 ). The structure element has at least one reflex angle (alpha). The angled structure element (O) includes at least one convex section (A) facing the reflex angle (alpha). At least one transparent structure (T) adjacent to the angled structure element (O) is provided at the convex section (A) of the angled structure element (O). The transparent structure (T) is formed in separated fashion at the convex section (A) of the angled structure element (O) and thus comprises two distinguishable transparent segments (T 1 , T 2 ) formed at least in sections essentially axially symmetrically with respect to the angle bisector (WH) of the reflex angle.</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>AUXILIARY PROCESSES IN PHOTOGRAPHY</subject><subject>CINEMATOGRAPHY</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>MATERIALS THEREFOR</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR,STEREO-PHOTOGRAPHIC PROCESSES</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES</subject><subject>PHYSICS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2005</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDD0ySzJyE8vSizIqFTITSzOVkjLL1LIzE1Mz8xLV8hPU0jOzytLrVAoLikqTS4pLUot5mFgTUvMKU7lhdLcDMpuriHOHrqpBfnxqcUFicmpeakl8aHBRgYGpgaWpqaGRo6GxsSpAgBlTCzs</recordid><startdate>20050505</startdate><enddate>20050505</enddate><creator>AHRENS MARCO</creator><creator>KOHLE RODERICK</creator><creator>LUDWIG BURKHARD</creator><creator>MOUKARA MOLELA</creator><creator>THIELE JORG</creator><creator>PFORR RAINER</creator><creator>MORGANA NICOLO</creator><scope>EVB</scope></search><sort><creationdate>20050505</creationdate><title>Lithography mask for imaging of convex structures</title><author>AHRENS MARCO ; KOHLE RODERICK ; LUDWIG BURKHARD ; MOUKARA MOLELA ; THIELE JORG ; PFORR RAINER ; MORGANA NICOLO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2005095512A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2005</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>AUXILIARY PROCESSES IN PHOTOGRAPHY</topic><topic>CINEMATOGRAPHY</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>MATERIALS THEREFOR</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR,STEREO-PHOTOGRAPHIC PROCESSES</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES</topic><topic>PHYSICS</topic><toplevel>online_resources</toplevel><creatorcontrib>AHRENS MARCO</creatorcontrib><creatorcontrib>KOHLE RODERICK</creatorcontrib><creatorcontrib>LUDWIG BURKHARD</creatorcontrib><creatorcontrib>MOUKARA MOLELA</creatorcontrib><creatorcontrib>THIELE JORG</creatorcontrib><creatorcontrib>PFORR RAINER</creatorcontrib><creatorcontrib>MORGANA NICOLO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>AHRENS MARCO</au><au>KOHLE RODERICK</au><au>LUDWIG BURKHARD</au><au>MOUKARA MOLELA</au><au>THIELE JORG</au><au>PFORR RAINER</au><au>MORGANA NICOLO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Lithography mask for imaging of convex structures</title><date>2005-05-05</date><risdate>2005</risdate><abstract>A lithography mask has an angled structure element (O) formed by a first opaque segment (O 1 ) and by a second opaque segment (O 2 ). The structure element has at least one reflex angle (alpha). The angled structure element (O) includes at least one convex section (A) facing the reflex angle (alpha). At least one transparent structure (T) adjacent to the angled structure element (O) is provided at the convex section (A) of the angled structure element (O). The transparent structure (T) is formed in separated fashion at the convex section (A) of the angled structure element (O) and thus comprises two distinguishable transparent segments (T 1 , T 2 ) formed at least in sections essentially axially symmetrically with respect to the angle bisector (WH) of the reflex angle.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
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subjects | APPARATUS SPECIALLY ADAPTED THEREFOR AUXILIARY PROCESSES IN PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR,STEREO-PHOTOGRAPHIC PROCESSES PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES PHYSICS |
title | Lithography mask for imaging of convex structures |
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