Electroluminescent device comprising porous silicon

Electroluminescent device comprising porous silicon

An electroluminescent device ( 10 ) comprises a porous silicon region ( 22 ) adjacent a bulk silicon region ( 20 ), together with a top electrical contact ( 24 ) of transparent indium tin oxide and a bottom electrical contact ( 26 ) of aluminium. The device includes a heavily doped region ( 28 ) to...

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Bibliographische Detailangaben
Hauptverfasser: SIMONS ANDREW J, BLACKER RICHARD S, LONI ARMANDO, COX TIMOTHY I, CANHAM LEIGH T
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:An electroluminescent device ( 10 ) comprises a porous silicon region ( 22 ) adjacent a bulk silicon region ( 20 ), together with a top electrical contact ( 24 ) of transparent indium tin oxide and a bottom electrical contact ( 26 ) of aluminium. The device includes a heavily doped region ( 28 ) to provide an ohmic contact. The porous silicon region (22) is fabricated by anodizing through an ion-implanted surface layer of the bulk silicon. The silicon remains unannealed between the ion-implantation and anodization stages. The device ( 10 ) has a rectifying p-n junction within the porous silicon region ( 22 ).