METHOD OF FORMING A LOW K DIELECTRIC IN A SEMICONDUCTOR MANUFACTURING PROCESS

METHOD OF FORMING A LOW K DIELECTRIC IN A SEMICONDUCTOR MANUFACTURING PROCESS

A low K dielectric composite layer is formed of a low k barrier layer and a low K dielectric layer on the barrier layer. The barrier layer, which is deposited with the result of having a hydrophobic top surface, is treated with an oxygen plasma to convert the surface from hydrophobic to hydrophilic....

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: DOUGAN JAMES N, SMITH LESLEY A
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A low K dielectric composite layer is formed of a low k barrier layer and a low K dielectric layer on the barrier layer. The barrier layer, which is deposited with the result of having a hydrophobic top surface, is treated with an oxygen plasma to convert the surface from hydrophobic to hydrophilic. A subsequent water-based clean is very effective in removing yield-reducing defects on the barrier layer due to the conversion of the surface of the barrier layer. After the water-based clean, the low K dielectric layer is formed on the surface of the barrier layer to achieve the composite layer that has a low K.