Method of using an adhesion precursor layer for chemical vapor deposition (CVD) copper deposition

Method of using an adhesion precursor layer for chemical vapor deposition (CVD) copper deposition

An exemplary embodiment is related to a method of using an adhesion precursor in an integrated circuit fabrication process. The method includes providing a gas of material over a dielectric material and providing a copper layer over an adhesion precursor layer. The adhesion precursor layer is formed...

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Bibliographische Detailangaben
Hauptverfasser: MYERS ALLINE F, TRAN MINH Q, BESSER PAUL R, LOPATIN SERGEY D, ROMERO JEREMIAS D, WANG CONNIE P, YOU LU
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:An exemplary embodiment is related to a method of using an adhesion precursor in an integrated circuit fabrication process. The method includes providing a gas of material over a dielectric material and providing a copper layer over an adhesion precursor layer. The adhesion precursor layer is formed by the gas, and the dielectric material includes an aperture.