In situ hardmask pullback using an in situ plasma resist trim process
The present invention provides a process of manufacturing an isolation structure for use in a semiconductor device. The process includes forming an opening in a substrate through a patterned photoresist layer 225 and a hardmask layer 215 located over the substrate 205 with plasma, trimming the photo...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | The present invention provides a process of manufacturing an isolation structure for use in a semiconductor device. The process includes forming an opening in a substrate through a patterned photoresist layer 225 and a hardmask layer 215 located over the substrate 205 with plasma, trimming the photoresist layer 225 with a plasma to create an exposed portion 215 a of the hardmask layer 215 , removing the exposed portion 215 a with a plasma to create a trench guide opening 227 , and creating a trench 230 through the trench guide opening 227 with a plasma. |
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