High-pressure processing apparatus and high-pressure processing method

Mixing baths 6A and 6B which temporarily hold chemical agents A and B respectively are disposed. The mixing baths 6A and 6B are each connected with a high-pressure fluid supplying unit 2. For surface treatment using a mixture of the chemical agent A and SCF (processing fluid), SCF is fed under press...

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Bibliographische Detailangaben
Hauptverfasser:	YAMAGATA MASAHIRO, MURAOKA YUSUKE, IWATA TOMOMI, INOUE YOICHI, OSHIBA HISANORI, SAITO KIMITSUGU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CLEANING CLEANING IN GENERAL CONTROLLING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY PERFORMING OPERATIONS PHYSICS PREVENTION OF FOULING IN GENERAL REGULATING SEMICONDUCTOR DEVICES SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES TRANSPORTING
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Beschreibung
Zusammenfassung:	Mixing baths 6A and 6B which temporarily hold chemical agents A and B respectively are disposed. The mixing baths 6A and 6B are each connected with a high-pressure fluid supplying unit 2. For surface treatment using a mixture of the chemical agent A and SCF (processing fluid), SCF is fed under pressure from the high-pressure fluid supplying unit 2 to the mixing bath 6A which already holds the chemical agent A, whereby the chemical agent A dissolves in SCF flowing into the mixing bath 6A and the mixture of the chemical agent A and SCF (processing fluid) is created. As a high-pressure valve (processing fluid introducing valve) 39 is opened, the processing fluid is sent into a pressure vessel 1. This achieves a predetermined surface treatment of a substrate which has been set inside the pressure vessel 1, using the processing fluid.