Semiconductor device with polysilicon fuse and method for trimming the same

A semiconductor device includes a polysilicon fuse with a fusion portion and has a sequential stack made of an interlayer insulating film having a recess above the fusion portion, a surface passivation film having an opening on the recess, a buffer film filling the recess and the opening, and a seal...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: MATSUNAGA TOMOHIRO, MOGAMI HIROSHI
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A semiconductor device includes a polysilicon fuse with a fusion portion and has a sequential stack made of an interlayer insulating film having a recess above the fusion portion, a surface passivation film having an opening on the recess, a buffer film filling the recess and the opening, and a sealing resin layer. The buffer film releases film stress on the polysilicon fuse placed by the sealing resin layer, and avoids influences of the film stress on trimming of the device. In a method for trimming a semiconductor device, trimming is carried out by applying to the polysilicon fuse a voltage pulse capable of melting the polysilicon fuse at the fusion portion and interrupting the applied voltage with a current flowing through the fuse. This avoids influences of film stress placed by the sealing resin.