Atomic laminates for diffusion barrier applications

The present invention relates to a very thin multilayer diffusion barrier for a semiconductor device and fabrication method thereof. The multilayer diffusion barrier according to the present invention is fabricated by forming a very thin, multilayer diffusion barrier composed of even thinner sub-lay...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	KIM HYUNGJUN, ROSSNAGEL STEPHEN M, BARMAK KATAYUN, NOYAN ISMAIL C
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!