Semiconductor device having a nickel/cobalt silicide region formed in a silicon region

Semiconductor device having a nickel/cobalt silicide region formed in a silicon region

By forming a buried nickel silicide layer followed by a cobalt silicide layer in silicon-containing regions, such as a gate electrode of a field effect transistor, the superior characteristics of both silicides may be combined so as to provide the potential for further device scaling without unduly...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: FRENKEL AUSTIN, WIECZOREK KARSTEN, KAMMLER THORSTEN
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:By forming a buried nickel silicide layer followed by a cobalt silicide layer in silicon-containing regions, such as a gate electrode of a field effect transistor, the superior characteristics of both silicides may be combined so as to provide the potential for further device scaling without unduly compromising the sheet resistance and the contact resistance of scaled silicon circuit features.