Molecularly controlled dual gated field effect transistor for sensing applications
A sensing device and method of making and using the sensing device. The device comprises a sensing gate layer of multifunctional organic sensing molecules having at least one functional group that binds to the semiconductor layer and at least another functional group that serves as a sensor. The dev...
Gespeichert in:
Hauptverfasser: | , |
---|---|
Format: | Patent |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | A sensing device and method of making and using the sensing device. The device comprises a sensing gate layer of multifunctional organic sensing molecules having at least one functional group that binds to the semiconductor layer and at least another functional group that serves as a sensor. The device further comprises a semiconductor channel layer, a drain electrode, a source electrode, and a biasing gate. The source and drain electrodes and biasing gate are situated on the same side of the device and simultaneously on the opposite side of the sensing gate layer. The sensing gate layer may be directly in contact with the intermediate layer or the semiconductor channel layer. |
---|