ORGANIC SEMICONDUCTOR DEVICES AND METHODS OF FABRICATION

The present invention discloses a vertical junction structure with multi-PN channels, which provides a maximum interface between p-type and n-type materials in order to assist the charge separation, and offers continuous phases in both p- and n-type materials for charge transport in opposite directi...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: XIAO STEVEN, QIU CHUNONG, QIU CINDY XING
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:The present invention discloses a vertical junction structure with multi-PN channels, which provides a maximum interface between p-type and n-type materials in order to assist the charge separation, and offers continuous phases in both p- and n-type materials for charge transport in opposite directions. The present invention also provides methods for constructing the device structures. The main steps include 1) assembling a porous structure or a framework with semiconductor materials of one conduction type on a first electrode, 2) filling pores or coating the framework made from the materials in step 1 with semiconductors or precursors of conducting polymer of a opposite conduction type, 3) chemically and physically treating the system to form closed packed multi-PN channels.