Hard pellicle and fabrication thereof

Disclosed are thin hard pellicle for projection photolithography and process for making the same. The thin hard pellicle comprises a pellicle layer having a thickness in the range of about 5 to 120 mum and a mount frame attached to the peripheral area of a surface of the pellicle layer. The pellicle...

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Bibliographische Detailangaben
1. Verfasser:	BELLMAN ROBERT A
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CHEMICAL SURFACE TREATMENT CHEMISTRY CINEMATOGRAPHY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTROGRAPHY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS HOLOGRAPHY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL MATERIALS THEREFOR METALLURGY ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION TECHNICAL SUBJECTS COVERED BY FORMER USPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Beschreibung
Zusammenfassung:	Disclosed are thin hard pellicle for projection photolithography and process for making the same. The thin hard pellicle comprises a pellicle layer having a thickness in the range of about 5 to 120 mum and a mount frame attached to the peripheral area of a surface of the pellicle layer. The pellicle layer can consist essentially of a material selected from silica, fluorine doped silica, aluminum doped silica, methylated silica, fluorinated and methylated silica, fluorinated aluminum doped silica, CaF2, MgF2, BaF2 and SiC. The mount frame is preferred to have substantially the same CTE of the pellicle layer to minimize stress caused by temperature change. The process for making the hard pellicle involves ion implantation of a silicon wafer, deposition of the pellicle layer on the silicon wafer, mounting the frame to the pellicle layer and the separation of the pellicle from the wafer by heat treatment.