Fabrication process for a magnetic tunnel junction device

A magnetic random access memory device having a magnetic tunnel junction is provided, as well as methods of fabricating the same. The magnetic tunnel junction includes a first magnetic layer, a second magnetic layer, a tunnel barrier layer, and dielectric material portions. The first magnetic layer...

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Bibliographische Detailangaben

Hauptverfasser:	FINDEIS FRANK, RABERG WOLFGANG, KASKO IHAR
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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