Fabrication process for a magnetic tunnel junction device

A magnetic random access memory device having a magnetic tunnel junction is provided, as well as methods of fabricating the same. The magnetic tunnel junction includes a first magnetic layer, a second magnetic layer, a tunnel barrier layer, and dielectric material portions. The first magnetic layer is formed over the second magnetic layer. The tunnel barrier layer is located between the first and second magnetic layers. The dielectric material portions are formed on sidewalls of the first magnetic layer and over the second magnetic layer. The dielectric material portions may be formed directly atop the second magnetic layer. In another embodiment, the dielectric material portion may be formed directly atop the tunnel barrier layer. Preferably, the dielectric material portions prevent shorts from developing across the tunnel barrier layer during the etching of the second magnetic layer.