METHOD OF PRODUCING A HIGH RESISTIVITY SIMOX SILICON SUBSTRATE

The present invention provides a method for generating silicon-on-insulator (SOI) wafers that exhibit a high electrical resistivity. In one embodiment of a method according to the teachings of the invention, a SIMOX process is sandwiched between two Full Oxygen Precipitation (FOP) cycles that seques...

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Bibliographische Detailangaben
Hauptverfasser:	EROKHIN YURI, KONONCHUK OLEG V
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	The present invention provides a method for generating silicon-on-insulator (SOI) wafers that exhibit a high electrical resistivity. In one embodiment of a method according to the teachings of the invention, a SIMOX process is sandwiched between two Full Oxygen Precipitation (FOP) cycles that sequester interstitial oxygen present in the substrate in the form of oxide precipitates, thereby enhancing the electrical resistivity of the susbtrate.