Device and method for multicrystalline silicon wafers

A method for making ingots, and devices for making ingots are provided. Crucibles are provided that are reusable for forming multicrystalline silicon ingots. Crucibles are provided with features such as multiple components, coefficients of thermal expansion, and coatings that enhance a release of th...

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Bibliographische Detailangaben
Hauptverfasser:	SKELTON DEAN C, CHARTIER CARL, HARIHARAN ALLEPPEY V, JONES BERNARD D, MCGEE TOM, CHANDRA MOHAN, RAGHAVAN P. SANTHANA
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	A method for making ingots, and devices for making ingots are provided. Crucibles are provided that are reusable for forming multicrystalline silicon ingots. Crucibles are provided with features such as multiple components, coefficients of thermal expansion, and coatings that enhance a release of the ingots from the crucibles after cooling. Coatings on crucibles are provided that reduce or eliminate contamination of silicon ingots during formation. Methods of forming composite wafers are provided that produce a low cost wafer without sacrificing performance.