Reflective mask structure and method of formation

A reflective mask, useful in extreme ultraviolet lithography (EUVL), and method of formation are disclosed. Instead of patterning an absorbing film stack, as is the case with conventional EUVL masks, the reflective film stack itself is patterned and etched to form a trench in the reflective stack. A...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	LAWLISS MARK, FISCH GALLAGHER EMILY, THIEL CAREY W, KINDT LOUIS M, RACETTE KENNETH C
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MANUFACTURE OR TREATMENT OF NANOSTRUCTURES MATERIALS THEREFOR MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES NANOTECHNOLOGY ORIGINALS THEREFOR PERFORMING OPERATIONS PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES TRANSPORTING
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	A reflective mask, useful in extreme ultraviolet lithography (EUVL), and method of formation are disclosed. Instead of patterning an absorbing film stack, as is the case with conventional EUVL masks, the reflective film stack itself is patterned and etched to form a trench in the reflective stack. A hard mask is deposited directly on the reflective substrate. It is patterned and repaired. Then the reflective film is removed in the patterned area to create absorbing trenches. The hard mask may then be stripped or remain in place on the final mask. A liner may be formed on the trench to absorb radiation and protect the sidewalls.