INDIUM PHOSPHIDE HETEROJUNCTION BIPOLAR TRANSISTOR LAYER STRUCTURE AND METHOD OF MAKING THE SAME

INDIUM PHOSPHIDE HETEROJUNCTION BIPOLAR TRANSISTOR LAYER STRUCTURE AND METHOD OF MAKING THE SAME

An epitaxial layer structure that achieves reliable, high speed, and low noise device performance in indium phosphide (InP) based heterojunction bipolar transistors (HBTs) for high data rate receivers and optoelectronic integrated circuits (OEIC). The layer consists of an n+InGaAs subcollector, an n...

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Bibliographische Detailangaben
Hauptverfasser: SHEN SHYHIANG, FENG MILTON, CARUTH DAVID C
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:An epitaxial layer structure that achieves reliable, high speed, and low noise device performance in indium phosphide (InP) based heterojunction bipolar transistors (HBTs) for high data rate receivers and optoelectronic integrated circuits (OEIC). The layer consists of an n+InGaAs subcollector, an n+InP subcollector, an unintentionally doped InGaAs collector, a carbon-doped base, an n-type InP emitter, an n-type InGaAs etch-stop layer, an n-type InP emitter, and an InGaAs cap layer.