Single poly EEPROM with improved coupling ratio

A semiconductor device (200) comprising a semiconductor substrate (210) having a well (220) located therein and a first dielectric (250) located over the well (220). The semiconductor substrate (210) is doped with a first type dopant, and the well (220) is doped with a second type dopant opposite to...

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Bibliographische Detailangaben

1. Verfasser:	MITROS JOZEF C
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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