Single poly EEPROM with improved coupling ratio

Single poly EEPROM with improved coupling ratio

A semiconductor device (200) comprising a semiconductor substrate (210) having a well (220) located therein and a first dielectric (250) located over the well (220). The semiconductor substrate (210) is doped with a first type dopant, and the well (220) is doped with a second type dopant opposite to...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser: MITROS JOZEF C
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A semiconductor device (200) comprising a semiconductor substrate (210) having a well (220) located therein and a first dielectric (250) located over the well (220). The semiconductor substrate (210) is doped with a first type dopant, and the well (220) is doped with a second type dopant opposite to that of the first type dopant. The semiconductor device (200) also comprises first and second electrodes (310, 320), wherein at least the first electrodes (310) are located over the well (220) and first dielectric (250). A second dielectric (510) may be located between the first and second electrodes (310, 320).