Method of forming a planarized bond pad structure

Method of forming a planarized bond pad structure

A method of forming a planarized bond pad structure in a bond pad opening, while removing bond pad material from an opening in a non-device region used for scribe line formation, has been developed. A first iteration of this invention features the formation of the planarized bond bad structure in a...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: HUANG CHENGUNG, WU TIENI, CHEN KUOOU, SU YEA-ZAN
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator HUANG CHENGUNG
WU TIENI
CHEN KUOOU
SU YEA-ZAN
description A method of forming a planarized bond pad structure in a bond pad opening, while removing bond pad material from an opening in a non-device region used for scribe line formation, has been developed. A first iteration of this invention features the formation of the planarized bond bad structure in a bond pad opening defined in a dielectric layer, accomplished via deposition of a bond pad material followed by a chemical mechanical polishing (CMP), procedure, with the CMP procedure terminating at the top surface of the dielectric stop layer. The above procedures also result in unwanted bond pad material remaining in the scribe line opening. A photolithographic procedure defined to protect the planarized bond pad structure is used with a selective etching procedure removing unwanted bond pad material from the scribe line opening. A second iteration of this invention entails definition of a raised bond pad structure in the bond pad opening, accomplished via photolithographic and etch procedures, also resulting in removal of unwanted bond pad material from the scribe line opening. A subsequent CMP procedure results in the desired planarization of the bond pad structure.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2004110365A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2004110365A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2004110365A13</originalsourceid><addsrcrecordid>eNrjZDD0TS3JyE9RyE9TSMsvys3MS1dIVCjIScxLLMqsSk1RSMrPS1EoSExRKC4pKk0uKS1K5WFgTUvMKU7lhdLcDMpuriHOHrqpBfnxqcUFicmpeakl8aHBRgYGJoaGBsZmpo6GxsSpAgAh4yxU</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Method of forming a planarized bond pad structure</title><source>esp@cenet</source><creator>HUANG CHENGUNG ; WU TIENI ; CHEN KUOOU ; SU YEA-ZAN</creator><creatorcontrib>HUANG CHENGUNG ; WU TIENI ; CHEN KUOOU ; SU YEA-ZAN</creatorcontrib><description>A method of forming a planarized bond pad structure in a bond pad opening, while removing bond pad material from an opening in a non-device region used for scribe line formation, has been developed. A first iteration of this invention features the formation of the planarized bond bad structure in a bond pad opening defined in a dielectric layer, accomplished via deposition of a bond pad material followed by a chemical mechanical polishing (CMP), procedure, with the CMP procedure terminating at the top surface of the dielectric stop layer. The above procedures also result in unwanted bond pad material remaining in the scribe line opening. A photolithographic procedure defined to protect the planarized bond pad structure is used with a selective etching procedure removing unwanted bond pad material from the scribe line opening. A second iteration of this invention entails definition of a raised bond pad structure in the bond pad opening, accomplished via photolithographic and etch procedures, also resulting in removal of unwanted bond pad material from the scribe line opening. A subsequent CMP procedure results in the desired planarization of the bond pad structure.</description><edition>7</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2004</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20040610&amp;DB=EPODOC&amp;CC=US&amp;NR=2004110365A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20040610&amp;DB=EPODOC&amp;CC=US&amp;NR=2004110365A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>HUANG CHENGUNG</creatorcontrib><creatorcontrib>WU TIENI</creatorcontrib><creatorcontrib>CHEN KUOOU</creatorcontrib><creatorcontrib>SU YEA-ZAN</creatorcontrib><title>Method of forming a planarized bond pad structure</title><description>A method of forming a planarized bond pad structure in a bond pad opening, while removing bond pad material from an opening in a non-device region used for scribe line formation, has been developed. A first iteration of this invention features the formation of the planarized bond bad structure in a bond pad opening defined in a dielectric layer, accomplished via deposition of a bond pad material followed by a chemical mechanical polishing (CMP), procedure, with the CMP procedure terminating at the top surface of the dielectric stop layer. The above procedures also result in unwanted bond pad material remaining in the scribe line opening. A photolithographic procedure defined to protect the planarized bond pad structure is used with a selective etching procedure removing unwanted bond pad material from the scribe line opening. A second iteration of this invention entails definition of a raised bond pad structure in the bond pad opening, accomplished via photolithographic and etch procedures, also resulting in removal of unwanted bond pad material from the scribe line opening. A subsequent CMP procedure results in the desired planarization of the bond pad structure.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2004</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDD0TS3JyE9RyE9TSMsvys3MS1dIVCjIScxLLMqsSk1RSMrPS1EoSExRKC4pKk0uKS1K5WFgTUvMKU7lhdLcDMpuriHOHrqpBfnxqcUFicmpeakl8aHBRgYGJoaGBsZmpo6GxsSpAgAh4yxU</recordid><startdate>20040610</startdate><enddate>20040610</enddate><creator>HUANG CHENGUNG</creator><creator>WU TIENI</creator><creator>CHEN KUOOU</creator><creator>SU YEA-ZAN</creator><scope>EVB</scope></search><sort><creationdate>20040610</creationdate><title>Method of forming a planarized bond pad structure</title><author>HUANG CHENGUNG ; WU TIENI ; CHEN KUOOU ; SU YEA-ZAN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2004110365A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2004</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>HUANG CHENGUNG</creatorcontrib><creatorcontrib>WU TIENI</creatorcontrib><creatorcontrib>CHEN KUOOU</creatorcontrib><creatorcontrib>SU YEA-ZAN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>HUANG CHENGUNG</au><au>WU TIENI</au><au>CHEN KUOOU</au><au>SU YEA-ZAN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method of forming a planarized bond pad structure</title><date>2004-06-10</date><risdate>2004</risdate><abstract>A method of forming a planarized bond pad structure in a bond pad opening, while removing bond pad material from an opening in a non-device region used for scribe line formation, has been developed. A first iteration of this invention features the formation of the planarized bond bad structure in a bond pad opening defined in a dielectric layer, accomplished via deposition of a bond pad material followed by a chemical mechanical polishing (CMP), procedure, with the CMP procedure terminating at the top surface of the dielectric stop layer. The above procedures also result in unwanted bond pad material remaining in the scribe line opening. A photolithographic procedure defined to protect the planarized bond pad structure is used with a selective etching procedure removing unwanted bond pad material from the scribe line opening. A second iteration of this invention entails definition of a raised bond pad structure in the bond pad opening, accomplished via photolithographic and etch procedures, also resulting in removal of unwanted bond pad material from the scribe line opening. A subsequent CMP procedure results in the desired planarization of the bond pad structure.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_US2004110365A1
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Method of forming a planarized bond pad structure
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-04T03%3A53%3A05IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=HUANG%20CHENGUNG&rft.date=2004-06-10&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2004110365A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true