Method of forming a planarized bond pad structure

A method of forming a planarized bond pad structure in a bond pad opening, while removing bond pad material from an opening in a non-device region used for scribe line formation, has been developed. A first iteration of this invention features the formation of the planarized bond bad structure in a bond pad opening defined in a dielectric layer, accomplished via deposition of a bond pad material followed by a chemical mechanical polishing (CMP), procedure, with the CMP procedure terminating at the top surface of the dielectric stop layer. The above procedures also result in unwanted bond pad material remaining in the scribe line opening. A photolithographic procedure defined to protect the planarized bond pad structure is used with a selective etching procedure removing unwanted bond pad material from the scribe line opening. A second iteration of this invention entails definition of a raised bond pad structure in the bond pad opening, accomplished via photolithographic and etch procedures, also resulting in removal of unwanted bond pad material from the scribe line opening. A subsequent CMP procedure results in the desired planarization of the bond pad structure.