Method for creating a double transparent electrode pseudo two-phase CCD

A method of manufacturing a charge-coupled device, the method includes the steps of providing a substrate; covering the substrate with a single gate dielectric or a gate dielectric stack; covering the dielectric with a conducting material; depositing a second dielectric on the conducting material; e...

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Bibliographische Detailangaben
Hauptverfasser: SUMMA JOSEPH R, FULLERTON DANIEL B
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A method of manufacturing a charge-coupled device, the method includes the steps of providing a substrate; covering the substrate with a single gate dielectric or a gate dielectric stack; covering the dielectric with a conducting material; depositing a second dielectric on the conducting material; etching the second dielectric and the conducting material in selected regions; depositing a third dielectric on the both the etched away and non-etched away regions; etching the third dielectric such that a portion of the third dielectric remains on a sidewall of the etched away portions which forms a gap region; and depositing a second conducting material in the gap region.