METHOD FOR FORMING A SEMICONDUCTOR DEVICE STRUCTURE IN A SEMICONDUCTOE LAYER

METHOD FOR FORMING A SEMICONDUCTOR DEVICE STRUCTURE IN A SEMICONDUCTOE LAYER

A method for providing gates of transistors with at least two different work functions utilizes a silicidation of two different metals at different times, silicidation for one gate and polysilicon for the other, or silicidation using a single metal with two differently doped silicon structures. Thus...

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Bibliographische Detailangaben
Hauptverfasser: STEIMLE ROBERT F, SCHAEFFER JAMES K, LII YEONG-JYH T, ROSSOW MARC, NGUYEN BICH-YEN, PHAM DANIEL THANH-KHAC, VANDOOREN ANNE, GARCIA RICARDO, ZAVALA MELISSA O, KOH AL T, REID KIMBERLY G, GEREN JAMES P, STRAUB SHERRY G
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A method for providing gates of transistors with at least two different work functions utilizes a silicidation of two different metals at different times, silicidation for one gate and polysilicon for the other, or silicidation using a single metal with two differently doped silicon structures. Thus the problem associated with performing silicidation of two different metals at the same time is avoided. If the two metals have significantly different silicidation temperatures, the one with the lower temperature silicidation will likely have significantly degraded performance as a result of having to also experience the higher temperature required to achieve silicidation with the other metal.