Method and device for producing globular grains of high-puroty silicon having a diameter of between 50 um and 300um and use of the same
The invention relates to a method and a device for producing globular grains of high-purity silicon by atomising a silicon melt (6) in an ultrasonic field (10). Globular grains having a grain size of 50 mum can be produced by means of said method and device and can be used to separate high-purity si...
Gespeichert in:
Hauptverfasser: | , , |
---|---|
Format: | Patent |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | |
---|---|
container_issue | |
container_start_page | |
container_title | |
container_volume | |
creator | KRAUTER UDO SCHRECKENBERG PETER BLOCK HANS-DIETER |
description | The invention relates to a method and a device for producing globular grains of high-purity silicon by atomising a silicon melt (6) in an ultrasonic field (10). Globular grains having a grain size of 50 mum can be produced by means of said method and device and can be used to separate high-purity silicon from silane in the fluid bed. The silicon melt (6) is fed into the ultrasonic field (10) at a distance of |
format | Patent |
fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2004016392A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2004016392A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2004016392A13</originalsourceid><addsrcrecordid>eNqNzb0KwjAUBeAuDqK-wwXnQtqq4CiiuDipc7ltbpNAmoT8VHwCX1srfQCnc4bvcObZ-0pRWg5oOHAaVEvQWQ_OW55aZQQIbZuk0YPwqEwA24FUQuYueRtfEJRWrTUgcRg1AlfYUyQ_wobik8jAlkHqfxcVY1NLgUYSJUH4LpbZrEMdaDXlIlufT_fjJSdnawoOWzIU68etZGzDil21Lw9F9Z_6AJfqSoM</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Method and device for producing globular grains of high-puroty silicon having a diameter of between 50 um and 300um and use of the same</title><source>esp@cenet</source><creator>KRAUTER UDO ; SCHRECKENBERG PETER ; BLOCK HANS-DIETER</creator><creatorcontrib>KRAUTER UDO ; SCHRECKENBERG PETER ; BLOCK HANS-DIETER</creatorcontrib><description>The invention relates to a method and a device for producing globular grains of high-purity silicon by atomising a silicon melt (6) in an ultrasonic field (10). Globular grains having a grain size of 50 mum can be produced by means of said method and device and can be used to separate high-purity silicon from silane in the fluid bed. The silicon melt (6) is fed into the ultrasonic field (10) at a distance of <50 mm in relation to a field node, and the atomised silicon leaves the ultrasonic field (10) at a temperature close to the liquidus point. The invention also relates to a use of the product produced according to the inventive method or using the inventive device, as particles for producing high-purity silicon from silane in a fluid bed.</description><edition>7</edition><language>eng</language><subject>APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL ; ATOMISING APPARATUS ; CHEMISTRY ; COMPOUNDS THEREOF ; INORGANIC CHEMISTRY ; METALLURGY ; NON-METALLIC ELEMENTS ; NOZZLES ; PERFORMING OPERATIONS ; SPRAYING APPARATUS ; SPRAYING OR ATOMISING IN GENERAL ; TRANSPORTING</subject><creationdate>2004</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20040129&DB=EPODOC&CC=US&NR=2004016392A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25544,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20040129&DB=EPODOC&CC=US&NR=2004016392A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KRAUTER UDO</creatorcontrib><creatorcontrib>SCHRECKENBERG PETER</creatorcontrib><creatorcontrib>BLOCK HANS-DIETER</creatorcontrib><title>Method and device for producing globular grains of high-puroty silicon having a diameter of between 50 um and 300um and use of the same</title><description>The invention relates to a method and a device for producing globular grains of high-purity silicon by atomising a silicon melt (6) in an ultrasonic field (10). Globular grains having a grain size of 50 mum can be produced by means of said method and device and can be used to separate high-purity silicon from silane in the fluid bed. The silicon melt (6) is fed into the ultrasonic field (10) at a distance of <50 mm in relation to a field node, and the atomised silicon leaves the ultrasonic field (10) at a temperature close to the liquidus point. The invention also relates to a use of the product produced according to the inventive method or using the inventive device, as particles for producing high-purity silicon from silane in a fluid bed.</description><subject>APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL</subject><subject>ATOMISING APPARATUS</subject><subject>CHEMISTRY</subject><subject>COMPOUNDS THEREOF</subject><subject>INORGANIC CHEMISTRY</subject><subject>METALLURGY</subject><subject>NON-METALLIC ELEMENTS</subject><subject>NOZZLES</subject><subject>PERFORMING OPERATIONS</subject><subject>SPRAYING APPARATUS</subject><subject>SPRAYING OR ATOMISING IN GENERAL</subject><subject>TRANSPORTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2004</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNzb0KwjAUBeAuDqK-wwXnQtqq4CiiuDipc7ltbpNAmoT8VHwCX1srfQCnc4bvcObZ-0pRWg5oOHAaVEvQWQ_OW55aZQQIbZuk0YPwqEwA24FUQuYueRtfEJRWrTUgcRg1AlfYUyQ_wobik8jAlkHqfxcVY1NLgUYSJUH4LpbZrEMdaDXlIlufT_fjJSdnawoOWzIU68etZGzDil21Lw9F9Z_6AJfqSoM</recordid><startdate>20040129</startdate><enddate>20040129</enddate><creator>KRAUTER UDO</creator><creator>SCHRECKENBERG PETER</creator><creator>BLOCK HANS-DIETER</creator><scope>EVB</scope></search><sort><creationdate>20040129</creationdate><title>Method and device for producing globular grains of high-puroty silicon having a diameter of between 50 um and 300um and use of the same</title><author>KRAUTER UDO ; SCHRECKENBERG PETER ; BLOCK HANS-DIETER</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2004016392A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2004</creationdate><topic>APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL</topic><topic>ATOMISING APPARATUS</topic><topic>CHEMISTRY</topic><topic>COMPOUNDS THEREOF</topic><topic>INORGANIC CHEMISTRY</topic><topic>METALLURGY</topic><topic>NON-METALLIC ELEMENTS</topic><topic>NOZZLES</topic><topic>PERFORMING OPERATIONS</topic><topic>SPRAYING APPARATUS</topic><topic>SPRAYING OR ATOMISING IN GENERAL</topic><topic>TRANSPORTING</topic><toplevel>online_resources</toplevel><creatorcontrib>KRAUTER UDO</creatorcontrib><creatorcontrib>SCHRECKENBERG PETER</creatorcontrib><creatorcontrib>BLOCK HANS-DIETER</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KRAUTER UDO</au><au>SCHRECKENBERG PETER</au><au>BLOCK HANS-DIETER</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method and device for producing globular grains of high-puroty silicon having a diameter of between 50 um and 300um and use of the same</title><date>2004-01-29</date><risdate>2004</risdate><abstract>The invention relates to a method and a device for producing globular grains of high-purity silicon by atomising a silicon melt (6) in an ultrasonic field (10). Globular grains having a grain size of 50 mum can be produced by means of said method and device and can be used to separate high-purity silicon from silane in the fluid bed. The silicon melt (6) is fed into the ultrasonic field (10) at a distance of <50 mm in relation to a field node, and the atomised silicon leaves the ultrasonic field (10) at a temperature close to the liquidus point. The invention also relates to a use of the product produced according to the inventive method or using the inventive device, as particles for producing high-purity silicon from silane in a fluid bed.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
fulltext | fulltext_linktorsrc |
identifier | |
ispartof | |
issn | |
language | eng |
recordid | cdi_epo_espacenet_US2004016392A1 |
source | esp@cenet |
subjects | APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL ATOMISING APPARATUS CHEMISTRY COMPOUNDS THEREOF INORGANIC CHEMISTRY METALLURGY NON-METALLIC ELEMENTS NOZZLES PERFORMING OPERATIONS SPRAYING APPARATUS SPRAYING OR ATOMISING IN GENERAL TRANSPORTING |
title | Method and device for producing globular grains of high-puroty silicon having a diameter of between 50 um and 300um and use of the same |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-28T07%3A07%3A10IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=KRAUTER%20UDO&rft.date=2004-01-29&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2004016392A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |