Eliminating residual polymer in the cleaning process of post pad etching

A method for eliminating residual polymers for cleaning etched windows of bonding pads. The invention provides a wafer with etched bonding pad windows that is free of residual polymer. Residual polymers induce an increase in the defect rate of cleaning process and bonding process. The wet stripping...

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Bibliographische Detailangaben
Hauptverfasser:	HUANG SZUNG, WU CHING-PING, LIAN NAN-TZU, LEE H. W, LIU HSINNG
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CLEANING CLEANING IN GENERAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY PERFORMING OPERATIONS PREVENTION OF FOULING IN GENERAL SEMICONDUCTOR DEVICES TRANSPORTING
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Beschreibung
Zusammenfassung:	A method for eliminating residual polymers for cleaning etched windows of bonding pads. The invention provides a wafer with etched bonding pad windows that is free of residual polymer. Residual polymers induce an increase in the defect rate of cleaning process and bonding process. The wet stripping process peels Polyimide pieces from the surface of the passivation layer to form residual polymers on the wafer. The present invention utilizes the O2-ashing process to eliminate the residual polymers on the wafer. The present invention not only prevents Al-F formation on the bonding pads but also eliminates the residual polymers on the wafer. Therefore, the present invention may enhance the yield rate of semiconductor manufacturing by reducing the defect rates. The present invention does not increase the cost of the cleaning process but does increase the quality of the semiconductor.