Etch process for recessing polysilicon in trench structures

A method for etching a recess in a polysilicon region of a semiconductor device by applying a solution of NH4 OH in water to the polysilicon.

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Bibliographische Detailangaben
Hauptverfasser:	SCHUPKE KRISTIN, SCHROEDER UWE, KOEHLER DANIEL, TEWS HELMUT, KUDELKA STEPHAN, MICHAELIS ALEXANDER, POPP MARTIN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A method for etching a recess in a polysilicon region of a semiconductor device by applying a solution of NH4 OH in water to the polysilicon.