Flash memory array integrally formed with another device and method of manufacture therefor

In a workpiece for producing an apparatus having a flash memory array integrally formed with another device on a common substrate, a method for preparing the workpiece for high temperature oxidation processing permits a controllable short distance between adjacent components in the flash memory array. The workpiece includes a substrate sector configured for presenting a plurality of source elements and a plurality of drain elements for the flash memory array. The workpiece further includes a plurality of polysilicon lands arranged with the plurality of source elements and the plurality of drain elements for employment as floating gate structures in the flash memory array. The method includes the steps of: (a) growing an oxide material upon the workpiece substantially covering the workpiece; and (b) treating the oxide material with a nitrous oxide material. The treating is effected under conditions appropriate to establish a nitrogen-rich layer upon the oxide material.