POWER SIC DEVICES HAVING RAISED GUARD RINGS

POWER SIC DEVICES HAVING RAISED GUARD RINGS

Silicon carbide semiconductor power devices having epitaxially grown guard rings edge termination structure are provided. Forming the claimed guard rings from an epitaxially grown SiC layer avoids the traditional problems associated with implantation of guard rings, and permits the use of self align...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: SANKIN IGOR, DUFRENE JANNA B
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Silicon carbide semiconductor power devices having epitaxially grown guard rings edge termination structure are provided. Forming the claimed guard rings from an epitaxially grown SiC layer avoids the traditional problems associated with implantation of guard rings, and permits the use of self aligning manufacturing techniques for making the silicon carbide semiconductor power devices.