Method of producing an integrated circuit with a carbon nanotube

A method of producing an integrated circuit with a carbon nanotube is disclosed. The integrated circuit includes a source, a drain, and a gate, and the source and the drain are positioned on the gate. A catalytic material is deposited onto the source. The catalytic material is then subjected to chem...

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Bibliographische Detailangaben
1. Verfasser:	SCHLAF RUDIGER
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBEMICROSCOPY [SPM] BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPOUNDS THEREOF CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INFORMATION STORAGE INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL INORGANIC CHEMISTRY INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MEASURING METALLURGY NON-METALLIC ELEMENTS PHYSICS PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SCANNING-PROBE TECHNIQUES OR APPARATUS SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH STATIC STORES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TESTING UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	A method of producing an integrated circuit with a carbon nanotube is disclosed. The integrated circuit includes a source, a drain, and a gate, and the source and the drain are positioned on the gate. A catalytic material is deposited onto the source. The catalytic material is then subjected to chemical vapor deposition. This initiates growth of the carbon nanotube such that the carbon nanotube extends from the source. Next, the carbon nanotube is bent toward the integrated circuit such that the carbon nanotube extends between the source and the drain to render the circuit operable.