Photoresist residue removing liquid composition

The object of the present invention is to provide, in the production of semiconductor circuit elements, a photoresist residue removing liquid composition which is excellent for removing photoresist residues after dry etching without attacking the wiring material or the interlayer insulating film etc...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: ISHIKAWA NORIO, OOWADA TAKUO
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:The object of the present invention is to provide, in the production of semiconductor circuit elements, a photoresist residue removing liquid composition which is excellent for removing photoresist residues after dry etching without attacking the wiring material or the interlayer insulating film etc. This is made possible by a photoresist residue removing liquid composition containing one or more members selected from the group consisting of reducing compounds and their salts and one or more members selected from the group consisting of aliphatic polycarboxylic acids and their salts.