Method of manufacturing semiconductor device and semiconductor device

A vertical MIS is provided immediately above a trench-type capacitor provided in a memory cell forming region of a semiconductor substrate, and a lateral nMIS is provided in the peripheral circuit forming region of the semiconductor substrate. After forming the capacitor, the lateral nMIS is formed....

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	KISU HARUKO, MATSUOKA HIDEYUKI, NAKAZATO KAZUO, TABATA TSUYOSHI, KUJIRAI HIROSHI, KISU TERUAKI, MONIWA MASAHIRO, HAGA SATORU, KISU TERUO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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