Method of manufacturing semiconductor device and semiconductor device

A vertical MIS is provided immediately above a trench-type capacitor provided in a memory cell forming region of a semiconductor substrate, and a lateral nMIS is provided in the peripheral circuit forming region of the semiconductor substrate. After forming the capacitor, the lateral nMIS is formed....

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Bibliographische Detailangaben
Hauptverfasser:	KISU HARUKO, MATSUOKA HIDEYUKI, NAKAZATO KAZUO, TABATA TSUYOSHI, KUJIRAI HIROSHI, KISU TERUAKI, MONIWA MASAHIRO, HAGA SATORU, KISU TERUO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A vertical MIS is provided immediately above a trench-type capacitor provided in a memory cell forming region of a semiconductor substrate, and a lateral nMIS is provided in the peripheral circuit forming region of the semiconductor substrate. After forming the capacitor, the lateral nMIS is formed. In addition, after forming the lateral nMIS, the vertical MIS is formed. Furthermore, after forming a capacitor, an isolation part of the peripheral circuit is formed.