Use of selective oxidation to improve LDMOS power transistors

Use of selective oxidation to improve LDMOS power transistors

The invention includes a laterally diffused metal oxide semiconductor transistor comprising a gate electrode and comprising tapered oxide self aligned to the gate electrode and a method of making the transistor.

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Bibliographische Detailangaben
Hauptverfasser: PEARCE CHARLES WALTER, SHIBIB MUHAMMED AYMAN
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:The invention includes a laterally diffused metal oxide semiconductor transistor comprising a gate electrode and comprising tapered oxide self aligned to the gate electrode and a method of making the transistor.