Control of dopant diffusion from polysilicon emitters in bipolar integrated circuits

Control of dopant diffusion from polysilicon emitters in bipolar integrated circuits

An integrated circuit and a method of fabricating the same are disclosed. Complementary bipolar transistors (20p, 20n) are fabricated as vertical bipolar transistors. The emitter polysilicon (35), which is in contact with the underlying single-crystal base material, is doped with a dopant for the ap...

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Bibliographische Detailangaben
Hauptverfasser: HAUSLER ALFRED, BABCOCK JEFFREY A, BALSTER SCOTT G, PINTO ANGELO, SWANSON LELAND, HOWARD GREGORY E
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:An integrated circuit and a method of fabricating the same are disclosed. Complementary bipolar transistors (20p, 20n) are fabricated as vertical bipolar transistors. The emitter polysilicon (35), which is in contact with the underlying single-crystal base material, is doped with a dopant for the appropriate device conductivity type, and also with a diffusion retardant, such as elemental carbon, SiGeC, nitrogen, and the like. The diffusion retardant prevents the dopant from diffusing too fast from the emitter polysilicon (35). Device matching and balance is facilitated, especially for complementary technologies.