Etching systems and processing gas specie modulation

A method and system for etching a substrate control selectivity of the etch process by modulating the gas specie of the reactants. The gas specie selectively form and etch a buffer layer that protects underlying etch stop materials thereby providing highly selective etch processes.

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Bibliographische Detailangaben
Hauptverfasser: CELII FRANCIS G, JIANG PING
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A method and system for etching a substrate control selectivity of the etch process by modulating the gas specie of the reactants. The gas specie selectively form and etch a buffer layer that protects underlying etch stop materials thereby providing highly selective etch processes.