Method for evaluating concentration of metallic impurities in silicon wafer

A method for evaluating concentration of metal impurities contained in a silicon wafer, which comprises dropping concentrated sulfuric acid onto a surface of the silicon wafer to extract metal impurities solid-solubilized in the inside of the silicon wafer into the concentrated sulfuric acid, and ch...

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Bibliographische Detailangaben
1. Verfasser: MIZUNO MICHIHIRO
Format: Patent
Sprache:eng
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