Method for evaluating concentration of metallic impurities in silicon wafer
A method for evaluating concentration of metal impurities contained in a silicon wafer, which comprises dropping concentrated sulfuric acid onto a surface of the silicon wafer to extract metal impurities solid-solubilized in the inside of the silicon wafer into the concentrated sulfuric acid, and ch...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A method for evaluating concentration of metal impurities contained in a silicon wafer, which comprises dropping concentrated sulfuric acid onto a surface of the silicon wafer to extract metal impurities solid-solubilized in the inside of the silicon wafer into the concentrated sulfuric acid, and chemically analyzing metal impurities contained in the concentrated sulfuric acid. The problem imposed on high sensitivity evaluation of metals contained in silicon bulk is, in addition to increase of sensitivity of analysis apparatus itself, how to extract metals contained in a silicon wafer to a surface and recover them. This problem can be solved by the method of the present invention. |
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