Semiconductor device, a method of manufacturing the semiconductor device, and an apparatus for manufacturing the semiconductor device

A semiconductor device includes a DRAM having a memory cell constructed by an information storage capacitor C which is comprised of a lower electrode 54 made of a ruthenium film and an upper electrode 62 made of a capacity insulating film 61 and a titanium nitride film and which is connected in series with a memory cell selection MISFET Qs formed on the main surface of a semiconductor substrate 1. The capacity insulating film 61 is made of a multi layered film comprising two layered crystallized tantalum oxide films 56 and 58 each having a film thickness of 10 nm or less. The film thickness of the capacity insulating film 61 is set to 10 to 40 nm.