COMBINATION OF BPTEOS OXIDE FILM WITH CMP AND RTA TO ACHIEVE GOOD DATA RETENTION

COMBINATION OF BPTEOS OXIDE FILM WITH CMP AND RTA TO ACHIEVE GOOD DATA RETENTION

An improved method of fabricating a non-volatile semiconductor device having a BPTEOS oxide film is provided. The present method utilizes the step of performing a RTA at a temperature of about 800° C. immediately after the deposition of the BPTEOS film so as to densify and stabilize the same. Then,...

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Bibliographische Detailangaben
1. Verfasser: MEHTA SUNIL D
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:An improved method of fabricating a non-volatile semiconductor device having a BPTEOS oxide film is provided. The present method utilizes the step of performing a RTA at a temperature of about 800° C. immediately after the deposition of the BPTEOS film so as to densify and stabilize the same. Then, a CMP step is performed so as to planarize the BPTEOS film.